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january 2010 doc id 16967 rev 1 1/12 12 STS8DN3LLH5 dual n-channel 30 v, 0.0155 ? , 10 a, so-8 stripfet? v power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge high avalanche ruggedness low gate drive power losses application switching applications description this stripfet?v power mosfet technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class fom. figure 1. internal schematic diagram type v dss r ds(on) max i d STS8DN3LLH5 30 v < 0.019 ? 10 a (1) 1. the value is rated according r thj-pcb so-8 table 1. device summary order code marking package packaging STS8DN3LLH5 8dn3ll so-8 tape and reel www.st.com
contents STS8DN3LLH5 2/12 doc id 16967 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STS8DN3LLH5 electrical ratings doc id 16967 rev 1 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate-source voltage 22 v i d (1) 1. the value is rated according r thj-pcb drain current (continuous) at t c = 25 c 10 a i d (1) drain current (continuous) at t c =100 c 9 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 40 a p tot (2) total dissipation at t c = 25 c 2.7 w derating factor 0.02 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10sec thermal resistance junction-ambient 47 c/w
electrical characteristics STS8DN3LLH5 4/12 doc id 16967 rev 1 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds =max rating @125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 22 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 5 a v gs = 4.5 v, i d = 5 a 0.0155 0.020 0.019 0.022 ? ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs =0 - 724 132 21 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15 v, i d = 10 a v gs = 4.5 v figure 14 - 5.4 2 2.1 nc nc nc r g intrinsic gate resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -3.3 ?
STS8DN3LLH5 electrical characteristics doc id 16967 rev 1 5/12 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =15 v, i d = 5 a, r g =4.7 ?, v gs =10 v figure 13 - 4 4.2 21.1 3.5 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 10 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 40 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 10 a, v gs =0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, di/dt = 100 a/s, v dd = 25 v, tj=150 c - 20.8 10.5 1 ns nc a
electrical characteristics STS8DN3LLH5 6/12 doc id 16967 rev 1 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.01 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100m s 1 s 10m s tj=150c tc=25c s ingle p u l s e 0.1 am0496 3 v1 i d 60 40 20 0 0 2 v d s (v) 4 (a) 1 3 8 0 100 5v 4v 3 v v g s =10v am04954v1 i d 60 40 20 0 0 4 v g s (v) 8 (a) 2 6 10 8 0 100 v d s =4v am04955v1 bv d ss -50 0 t j (c) (norm) 50 100 0.90 0.95 1.00 1.05 1.10 150 i d =1ma am04956v1 r d s (on) 15 10 5 0 4 i d (a) (ohm) 2 6 20 25 i d =5a v g s =10v 8 10 am04957v1_ a
STS8DN3LLH5 electrical characteristics doc id 16967 rev 1 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd =15v i d =11a 10 12 am0495 8 v1 c 600 400 200 0 0 10 v d s (v) (pf) 8 00 20 ci ss co ss cr ss 1000 t j =25c f=1mhz am04959v1 v g s (th) 0.7 0.6 0.5 0.4 -50 0 t j (c) (norm) 0. 8 50 100 150 0.9 1.0 1.1 1.2 i d =250 a am04960v1 r d s (on) 1.2 1.0 0. 8 0.6 -50 0 t j (c) (norm) 50 100 150 1.4 1.6 1. 8 i d =5.5a v g s =10v am04961v1 v s d 0 4 i s d (a) (v) 2 10 6 8 0.4 0.5 0.6 0.7 0. 8 0.9 t j =-50c t j =175c t j =25c am04961v1
test circuits STS8DN3LLH5 8/12 doc id 16967 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STS8DN3LLH5 package mechanical data doc id 16967 rev 1 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STS8DN3LLH5 10/12 doc id 16967 rev 1 dim. mm. inch min. typ max. min. typ. max. a 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m 0.6 0.023 s 8 (max.) so-8 mechanical data
STS8DN3LLH5 revision history doc id 16967 rev 1 11/12 5 revision history table 8. document revision history date revision changes 12-jan-2010 1 first release
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